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Dareemaha cadaadiska matoorka 2CP3-68 1946725 ee carter excavator

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  • OE:1946725
  • Qiyaasta kala duwan0-600bar
  • Saxnaanta cabbirka:1%fs
  • Aagga codsiga:Waxaa loo adeegsaday Carter
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    Habka diyaarinta dareeraha cadaadiska, oo lagu garto ka kooban tillaabooyinka soo socda:

    S1, siinta wafer leh dusha dambe iyo dusha hore; Samaynta xariijimaha piezoresistive iyo aag taabasho oo aad u liidata oo ku taal dusha hore ee waferka; Samaynta dalool qoto dheer oo cadaadis ah adoo xoqaya dusha dambe ee waferka;

    S2, ku xidhaya xaashi taageero xagga dambe ee waferka;

    S3, soo saarista godadka rasaasta iyo fiilooyinka birta ee dhinaca hore ee waferka, iyo isku xirka xariijimaha piezoresistive si loo sameeyo buundada Wheatstone;

    S4, dhigista iyo samaynta lakabka passivation ee dusha hore ee waferka, iyo furitaanka qayb ka mid ah lakabka passivation si ay u sameeyaan aag bir ah. 2. Habka wax soo saarka ee dareemaha cadaadiska marka loo eego sheegashada 1, halkaas oo S1 si gaar ah uga kooban tahay tallaabooyinka soo socda: S11: bixinta wafer oo leh dusha dambe iyo dusha hore, iyo qeexida dhumucda filimka xasaasiga ah ee cadaadiska on wafer; S12: ion implantation waxaa loo isticmaalaa dusha hore ee wafer, strips piezoresistive waxaa lagu soo saaray habka heerkulka sare ee faafinta, iyo gobollada xiriir si aad ah loo doped; S13: dhigista iyo samaynta lakab difaac ah oogada hore ee waferka; S14: xoqin iyo samaynta dalool cadaadis qoto dheer oo ku saabsan dhabarka waferka si ay u sameeyaan filim cadaadis ah oo xasaasi ah. 3. Habka wax soo saarka ee dareemaha cadaadiska marka loo eego sheegashada 1, halkaas oo waferku yahay SOI.

     

    Sannadkii 1962, Tufte et al. waxa uu soo saaray dareemaha cadaadiska piezoresistive oo leh xadhig silikoon piezoresistive strips iyo qaab dhismeedka filimka silikon markii ugu horeysay, oo bilaabay cilmi baarista dareenka cadaadiska piezoresistive. Dabayaaqadii 1960-meeyadii iyo horraantii 1970-meeyadii, muuqaalka saddex teknooloji, oo kala ah, tignoolajiyada silikoon anisotropic etching technology, tignoolajiyada implantation ion iyo technology bonding anodic, ayaa isbedel weyn ku keenay dareemaha cadaadiska, kaas oo door muhiim ah ka ciyaaray hagaajinta waxqabadka dareeraha cadaadiska. . Laga soo bilaabo 1980-meeyadii, iyada oo horumarinta dheeraadka ah ee tiknoolajiyada micromachining, sida anisotropic etching, lithography, doping diffusion, implantation ion, bonding iyo daahan, cabbirka dareenka cadaadiska ayaa si joogto ah loo dhimay, dareenka ayaa la hagaajiyay, wax soo saarkuna waa mid sare iyo waxqabadka waa heer sare ah. Isla mar ahaantaana, horumarinta iyo codsiga tignoolajiyada cusub ee micromachining waxay ka dhigtaa dhumucda filimka ee dareenka cadaadiska si sax ah loo xakameeyo.

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